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Expanded Frequency Range for Power Amplifiers

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: 24 May, 2010  (New Product)
GaN HEMT MMIC Amplifiers from Cree increase available frequencies through X-band
Providing RF design engineers with the largest commercially available family of wide bandgap MMIC products, Cree has developed five new GaN HEMT MMIC amplifiers that increase the range of frequencies available through X-Band. As part of a sample release, the MMICs are currently available as bare die and are targeted to be available in packaged formats later this year.

“We are pleased to expand our existing GaN power amplifier MMIC line and introduce our first GaN LNA MMIC product. The introduction of these MMICs expands our leadership position in providing GaN solutions that improve system performance beyond what can be realized using traditional GaAs MMIC technology for applications such as communication systems, homeland defence, Electronic warfare and radar from S-band through X-band,” said Jim Milligan, Cree director of RF & Microwave Products. “By using our proven GaN MMIC process, the performance of these products can provide an attractive combination of power, efficiency and linearity for the system designer.”

The CMLA2540001D heralds the introduction of the first commercially available GaN HEMT low noise amplifier (LNA) MMIC. The device operates over the 2.5 to 4 GHz band with small-signal gain of 28 dB and input/output return losses of greater than 10 dB. At an operating voltage of 24 volts, the device has a noise figure of better than 2 dB over the entire frequency range, with a typical value of 1.7 dB. Input/output third order intercept points are 12 and 38 dBm, respectively. These features make this MMIC an excellent choice for a robust LNA with improved linearity and input power handling for radar and other S-band applications. This LNA occupies a small chip size of only 1.7 mm x 2.5 mm (67 mil x 98 mil).

Designated the CMPA2060025D, this MMIC power amplifier delivers approximately 25 watts of output power from 2 to 6 GHz, improving on the performance and extending the frequency coverage of Cree’s popular CMPA2560025D Series devices down to 2.0 GHz. Power gain over the band is 17 dB with input/output return losses of better than 7 dB. The MMIC shows excellent power added efficiency (PAE) of typically 35% over the entire frequency range and has dimensions of 3.67 mm x 3.61 mm (144 mil x 142 mil). This product is ideal for homeland defence and Electronic warfare applications.

The CMPA2735075D high power amplifiers provide 75 watts of output power with a typical PAE of 60% over an instantaneous bandwidth of 2.7 to 3.5 GHz. Ideal for civil and military radar applications that require significant power, gain and efficiency within a small footprint, the CMPA2735075D is one of the smallest MMIC high-power amplifiers covering this bandwidth available in the marketplace, measuring just 4.42 mm x 5 mm (173 mil x 197 mil). The amplifier operates with a supply voltage of 28 volts with 20 dB of power gain (typical); and is matched to 50 ohms input/output, requiring minimal off-chip bias bypassing.

The CMPA5585025D provides more than 25 watts output power over the 5 to 8 GHz band and is ideal for applications in point-to-point radios, satcom, test instrumentation and EMC amplifiers. This MMIC device provides 20 dB power gain with typical power added efficiencies of greater than 38% within a footprint of only 17.25 mm2 (0.027 in2).

The CMPA801B025D MMIC power amplifier covers the 8 to 11 GHz frequency range with a typical output power capability of 25 watts. This MMIC has applications in satellite communications and a variety of civilian and military radar applications. This device features 18 dB of power gain with typical power added efficiencies of 35% in an extremely small size of 4.78 mm x 3.61 mm (188 mil x 142 mil).
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